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The Leibniz-Institut für Kristallzüchtung (IKZ) is a leading research institution in the field of science & technology as well as service & transfer of crystalline materials. Our goal is to enable solutions for pressing societal challenges (e.g. communication, artificial intelligence, climate protection, health, etc.) through modern electronic & photonic technologies. The work covers the entire spectrum from basic and applied research to pre-industrial development and is carried out in cooperation with national and international partners from universities, academies and industry. The institute is part of the Forschungsverbund Berlin (https://www.fv-berlin.de/) and a member of the Leibniz Association (https://www.leibniz-gemeinschaft.de). You can find more details on the institute webpage: https://www.ikz-berlin.de. 

We are offering a

PostDoc position (m/f/d)

for the BMBF NanoMatFutur funded project “All-GO-HEMT”:

“Modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures with high electron mobility for highly efficient power transistors”

Semiconductor-based power electronics is a key technology for solving the greatest challenge facing society - sustainable energy generation. In addition to the conversion of energy generation to renewable and decentralized sources, the efficient use of energy is the most important lever for achieving sustainability goals in the energy sector. More efficient power electronics not only help to reduce harmful emissions through more efficient use of energy, but also increase the cost-effectiveness of energy-intensive processes. Gallium oxide (Ga2O3) is currently the subject of intensive research and development activities in the field of semiconductor power electronics. With its ultra-wide band gap, it enables an even more compact design and is therefore ideal for applications in power electronics. Even though power electronics based on Ga2O3 promise to be more efficient, the material is inferior to established materials in terms of charge carrier mobility. The central goal of the project is to overcome the material limitation of Ga2O3 in terms of charge carrier mobility with the help of the innovative design of an aluminum-alloyed heterostructure and thus eliminate this disadvantage. Our research group is widely recognized as one of the leading teams in this field, and this position will provide you with a unique platform to make significant contributions to the scientific community of oxide epitaxy for power electronics.

As a PostDoc, you will be responsible for the conception, planning and supervision of the electrical characterization and growth of layers via metal-oxide vapor-phase epitaxy (MOVPE). The aim here is to correlate the electrical properties with the growth parameters and to develop corresponding growth transport models. Hereby, the focus lays on the comprehensive electrical characterization via defect spectroscopy and advanced magneto-transport measurements. In addition, the postdoc will carry out the upscaling of the growth process in the end phase of the project. These interdisciplinary, scientific aspects of the project must be carried out and supervised by an experienced scientist who can back them up with relevant publications within the field.  

The key responsibilities of the PostDoc will include:

  • Electrical Characterization via temperature dependent conductivity and Hall effect measurements (25 mK – 1100 K), capacitance-voltage (C-V) and current-voltage (I-V) measurements, photo-assisted C-V measurements for dielectric evaluation, transfer length method (TLM) measurements including contact optimization, transistor transfer characteristics measurements (DC and pulsed), field-effect mobility measurements, deep-level transient spectroscopy (DLTS), deep-level optical spectroscopy (DLOS), and thermal admittance spectroscopy (TAS)
  • Modelling of semiconductor heterostructures including band structure and electrical transport
  • Foster strong collaborations with scientists from epitaxial growth and structural characterization to promote interdisciplinary research
  • Working with microprocessor technologists to jointly develop device processing workflows
  • Assist in securing third-party funding
  • Assist in supervising PhD students
  • Develop an international reputation and broaden your experience and skills to prepare for your future career inside or outside academia on the one hand and to strengthen the experimental expertise of IKZ on the other

The applicant must have the following minimum qualification:

  • A PhD degree and strong knowledge in physics, crystallography, materials science, or a related discipline with a strong background in semiconductor physics and devices
  • A strong track record of publications and therefore proven expertise in experimental physics, characterization methods, and semiconductors
  • Excellent knowledge of fundamental and solid-state physics
  • Basic knowledge of epitaxial growth methods
  • Ability to work within an interdisciplinary team of scientists, engineers, and students
  • Experience in supervising students
  • Exceptional communication skills both verbal and written in English
  • Effective analytic and problem-solving skills

In addition, some of the following skills and qualifications would be preferred:

  • 1+ years of experience as a PostDoc in semiconductor characterization
  • Experience in the conception and setting-up of experiments including craftmanship skills (soldering, screw connections, vacuum fittings) and programming skills (Python, LabView, Matlab, C++)
  • Experience in data management and electronic lab notebooks
  • Experience in semiconductor and device modelling software like Silvaco TCAD or Comsol 
  • Experience in working with low temperature cryostats and cryogenic liquids

What we offer:

The position is embedded in the BMBF NanoMatFutur project “All-GO-HEMT”. Within this project, the position is available from January 1, 2025 and is limited to five years. Payment is according to TVöD Bund (E13 100%) (Collective agreement for the public sector). The contract includes the usual social benefits (30 vacation days in a 5-day week, flexible working hours). The Leibniz-Institut für Kristallzüchtung actively promotes the development of young scientists and follows the guidelines of the Leibniz Association.

 

The Leibniz-Institut für Kristallzüchtung actively supports a healthy work-life balance and is an equal opportunities employer. Female candidates are encouraged to apply and will be given preference if suitably qualified. Among equally qualified candidates, preference will be given to candidates with disabilities. IKZ promotes diversity. We welcome every qualified application, regardless of age, belief, disabilities, ethnic origin, gender, nationality, religion, or sexual orientation.

If you want to have more information about the project, please contact us: 
Dr. Andreas Fiedler (andreas.fiedler@ikz-berlin.de)

Have we aroused your interest?
Then apply with a letter of motivation, curriculum vitae and all relevant certificates. To do so, please go to Job offers/jobs on our homepage and click on this advertisement and then on "Apply online". Applications will be accepted until the position is filled.

 We look forward to receiving your application!